Surface strain during homoepitaxy: growth and ion ablation of CdTe (Invited Paper)
International conference, Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 1998 ; Zakopane; Poland
Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 3725 ; 25-32
1999-01-01
8 pages
also known as ICSSC'98; See also same shelfmark vol 3724 1999 for further papers. See also 6275.7208 vol 7 no 2 1999 for further papers
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of oxide thin films by laser ablation (Invited Paper) [2207-86]
British Library Conference Proceedings | 1994
|Role of oxygen during CdTe growth for CdTe photovoltaic devices
Online Contents | 2014
|Pulsed laser ablation and deposition of quasicrystals (Invited Paper) [5147-48]
British Library Conference Proceedings | 2003
|Excimer ablation lithography (EAL) for TFT-LCD (Invited Paper) [2992-16]
British Library Conference Proceedings | 1997
|British Library Conference Proceedings | 1998
|