Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Forward current-voltage characteristics of HgCdTe p-on-n photodiodes [3379-66]


    Contributors:

    Conference:

    Conference; 5th, Infrared detectors and focal plane arrays ; 1998 ; Orlando; FL



    Publication date :

    1998-01-01


    Size :

    7 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Parameter determination from current–voltage characteristics of HgCdTe photodiodes in forward bias region

    Li, Y. / Ye, Z. H. / Lin, C. et al. | British Library Online Contents | 2013


    Nr. 3379

    DataCite | 1910


    Short-wavelength infrared HgCdTe photovoltaic detectors fabricated by boron implantation [3379-68]

    Zhao, J. / Wang, Q. / Fang, J. et al. | British Library Conference Proceedings | 1998


    256 x 256 HgCdTe MWIR array grown on Ge substrates [3379-64]

    Zanatta, J. P. / Luchier, N. / Audebert, P. et al. | British Library Conference Proceedings | 1998


    128 x 128 hybrid FPAs using MBE HgCdTe films on GaAs substrates [3379-65]

    Esaev, D. G. / Klimenko, A. G. / Kozlov, A. I. et al. | British Library Conference Proceedings | 1998