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    Title :

    Investigation of quantum well lasers which have superlattice buffer layer [2886-562]



    Conference:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    4 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]

    An, H. / Yang, S. / Sun, H. et al. | British Library Conference Proceedings | 1996


    Nr. 2886

    DataCite | 1900


    AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]

    Xu, Z.-T. / Yang, G.-W. / Xu, J.-Y. et al. | British Library Conference Proceedings | 1996


    Semiconductor lasers in China (Invited Paper) [2886-518]

    Chen, L. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996


    0.808-m InGaAsP/GaAs SCH lasers [2886-566]

    Zhu, B. / Zhang, X. / Bo, B. et al. | British Library Conference Proceedings | 1996