Structural properties of Si1-xGex layers grown onto crystalline or amorphous substrates by pulsed excimer laser annealing of Ge implanted silicon [2207-83]
Meeting entitled "Track on applications", Laser materials processing: industrial and microelectronics applications ; 1994 ; Vienna
1994-01-01
7 pages
Meeting incorporating 3 conferences entitled "Production line processes", "Process control and modeling" and "Novel applications"
Conference paper
English
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