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1–20 von 23 Ergebnissen
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    Wideband polarization insensitivity quantum dot optical amplifier

    Kita, T. / Jayavel, P. / Tanaka, H. et al. | IEEE | 2003
    Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization ...

    Electroluminescence from a single quantum dot at telecommunication wavelength

    Miyazawa, T. / Tatebayashi, J. / Nakaoka, T. et al. | IEEE | 2005
    We have fabricated single quantum dot light emitting diodes and observed over 1.3/spl mu/m electroluminescence for the first time. The ...

    Polarization-Insensitive Quantum Dot Semiconductor Optical Amplifiers Using Strain-Controlled Columnar Quantum Dots

    Yasuoka, N. / Ebe, H. / Kawaguchi, K. et al. | British Library Online Contents | 2012

      Polarization-Insensitive Quantum Dot Semiconductor Optical Amplifiers Using Strain-Controlled Columnar Quantum Dots

      Yasuoka, N. / Ebe, H. / Kawaguchi, K. et al. | British Library Online Contents | 2012

    Room temperature lasing in InAs quantum-dot microdisk laser

    Ide, T. / Baba, T. / Tatebayashi, J. et al. | IEEE | 2004
    We achieved the first room-temperature lasing in a InAs quantum-dot microdisk at a wavelength of 1.23 /spl mu/m by photopumping. We ...

    Quantum-dot lasing and photonic molecule behavior in microdisk lasers

    Baba, T. / Ide, T. / Ishi, S. et al. | IEEE | 2005

    Low-temperature near-field spectroscopy of quantum dots

    Arakawa, Y. / Toda, Y. / Nagamune, Y. et al. | IEEE | 1996
    We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present ...

    Optical characterization of strong carrier-phonon interactions in single quantum dots

    Toda, Y. / Inoue, T. / Nakaoka, T. et al. | IEEE | 2003
    Phonon-assisted transitions in single self-assembled InGaAs quantum dots are investigated by photoluminescence (PL) and PL excitation (PLE ...

      Optical characterization of strong carrier-phonon interactions in single quantum dots

      Toda, Y. / Inoue, T. / Nakaoka, T. et al. | British Library Conference Proceedings | 2003

    Epitaxial growth and physics of nanostructures for quantum dot lasers

    Arakawa, Y. | IEEE | 1996
    We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm ...

    InAs quantum dots on InP(100) grown by metalorganic vapor-phase epitaxy

    Kawaguchi, K. / Ekawa, M. / Kuramata, A. et al. | IEEE | 2003

    Carrier Dynamics of Single InAs Quantum Dots in a High Density Sample

    Eah, S.-K. / Hohng, S. / Jhe, W. et al. | British Library Conference Proceedings | 2001

    Carrier dynamics of single InAs quantum dots in a high density sample

    Sang-Kee Eah, / Sungchui Hohng, / Wonho Jhe, et al. | IEEE | 2001
    We performed time-resolved photoluminescence (PL) experiments on single InAs quantum dots in a high density sample. The PL rise time is ...

    Single photon emission from gallium nitride quantum dots at a record-short wavelength of 357 nm

    Kako, S. / Hoshino, K. / Ishida, S. et al. | IEEE | 2005
    We present measurements of the second-order coherence function on emission from single GaN quantum dots. A large degree of photon ...

    Measurement and evaluation of chirp and linewidth enhancement factor of a 1.3 /spl mu/m quantum dot laser

    Hatori, N. / Ishida, M. / Ebe, H. et al. | IEEE | 2004
    We measured chirp of quantum dot lasers under 5 Gb/s direct-modulation, and the chirp was less than 2 GHz. From the results and some ...

    Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons

    Nakayama, H. / Arakawa, Y. | IEEE | 1996
    We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate ...

    Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm

    Sugawara, M. / Otsubo, K. / Yamamoto, T. et al. | IEEE | 2005
    Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability ...

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | British Library Conference Proceedings | 2003

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | IEEE | 2003
    We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic ...