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Halbleitertechnologie
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keywords:(Halbleitertechnologie)
Metal organic vapor phase epitaxy of GaN and lateral overgrowth (Invited Paper)
Lithium niobate as the substratum for the SAW acceleration sensor [3179-45]
InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]
Isotype heterojunction in HgCdTe photodiodes [3179-41]
Thin film material on the basis of silver organoacetylide for photovisualization [3179-12]
Photosensitivity of graded-bandgap structures with interfacial recombination states
Carrier transport mechanisms in narrow-gap photodiodes (Invited Paper)
Processing parameters and transport properties of vacuum-evaporated CdSe thin films
Electronic properties of grown-in defects in semi-insulating GaAs
Intersubband transitions in n-type quantum well systems (Invited Paper)
Method of radical beam epitaxy
Reciprocal lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substrates
Carrier lifetime in Hg~1~-~xCd~xTe grown by molecular beam epitaxy
Point contact spectroscopy of ZnS:Mn,Cu-Al thin film cells
Photoreflectance investigations of Al~xGa~1~-~xAs/GaAs bandgap dependence on Al content
Magnetic and magnetotransport properties of epitaxial MBE-grown Co/Cu multilayers
Mechanisms of heteroepitaxial growth of the (Ba~1~-~xSr~x)TiO~3//MgO(001) thin ferroelectric films
Growth of high-quality GaN and Al~xGa~1~-~xN layers by an MOVPE technique