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    Titel :

    High-quality LEO growth and characterization of GaN films on Al~2O~3 and Si substrates (Invited Paper)



    Kongress:

    International conference, Solid state crystals: Epilayers and heterostructures in optoelectronics and semiconductor technology ; 1998 ; Zakopane; Poland



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    7 pages


    Anmerkungen:

    also known as ICSSC'98; See also same shelfmark vol 3724 1999 for further papers. See also 6275.7208 vol 7 no 2 1999 for further papers




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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