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    Low frequency chirp self-assembled InGaAs/GaAs quantum dot lasers

    Hatori, N. / Sugawara, M. / Akiyama, T. et al. | IEEE | 2001
    We measured and compared frequency chirp between a quantum dot laser and a quantum well laser. The chirp of the quantum dot laser was below ...

    Intrinsic Limitations of p-doped and Undoped 1.3 μm InAs/GaAs Quantum Dot Lasers

    Masse, N.F. / Sweeney, S.J. / Marko, I.P. et al. | IEEE | 2006

    Quantum-dot semiconductor optical amplifiers for high bit-rate signal processing over 40 Gbit/s

    Sugawara, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2001
    We theoretically demonstrate that semiconductor optical amplifiers with self-assembled quantum dots can process high bit-rate optical ...

      Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing Over 40 Gbit/s

      Sugawara, M. / Hatori, N. / Akiyama, T. et al. | British Library Conference Proceedings | 2001

    The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

    Masse, N.F. / Marko, I.P. / Sweeney, S.J. et al. | IEEE | 2005
    We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects ...

    Carrier dynamics in self-assembled InGaAs/GaAs quantum dots and their application to optical devices

    Sugawara, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2001
    This talk provides following topics on our research of self-assembled InGaAs/GaAs quantum dots: 1) carrier dynamics and optical gain, 2 ...

      Carrier Dynamics in Self-Assembled InGaAs/GaAs Quantum Dots and Their Application to Optical Devices

      Sugawara, M. / Hatori, N. / Akiyama, T. et al. | British Library Conference Proceedings | 2001

    Measurement and evaluation of chirp and linewidth enhancement factor of a 1.3 /spl mu/m quantum dot laser

    Hatori, N. / Ishida, M. / Ebe, H. et al. | IEEE | 2004
    We measured chirp of quantum dot lasers under 5 Gb/s direct-modulation, and the chirp was less than 2 GHz. From the results and some ...

    Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm

    Sugawara, M. / Otsubo, K. / Yamamoto, T. et al. | IEEE | 2005
    Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability ...

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | British Library Conference Proceedings | 2003

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | IEEE | 2003
    We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic ...

    Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

    Tatebayashi, J. / Hatori, N. / Ebe, H. et al. | IEEE | 2003
    This study demonstrates lasing action with very low threshold current (6.7 mA) of InAs/GaAs quantum dots at the wavelength of 1.18 /spl mu ...

    Design of high-speed directly-modulated self-assembled quantum-dot lasers aiming at 40 Gb/s operation: experiments and model

    Ishida, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2004
    Modulation characteristics of 1.3 /spl mu/m quantum-dot lasers were investigated experimentally and theoretically to evaluate the K-factor ...

    1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

    Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004
    This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...