Synonyme wurden verwendet für: Werkstoff
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1–10 von 126 Ergebnissen
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    Variation of Growth Temperature for Improved Dynamic Range GaAs Metal-Semiconductor-Metal (MSM) Photodetectors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    The MBE Growth and MCP/RIE Based Fabrication of InGaAs-GaAs MQW Structures for 1047-1064 nm S-SEED Arrays

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    Considerations for the Design, Production, and Application of Metal-Organic Precursors in Optoelectronic Material Growth

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    III-V Nitrides for Optical Emitters

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    Enhanced Dry-Etched Mirror Process for High-Speed and Monolithically Integrated GaAs-Based MQW Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    Correlation of Epitaxial Layer Measurements with Device Performance: Practicalities

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    The State of Blue/Green ZnSe-Based Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    Selective Epitaxy with In-situ Mask Processing

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    Substrate Misorientation Effect on Cubic and Hexagonal GaN Grown on GaAs by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth

    Deposition Condition Dependence of Silicon Nitride Used as a Diffusion Barrier during MBE Growth of III-Vs on Silicon VLSI Electronics

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994
    Schlagwörter: optoelectronic materials growth