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    Titel :

    Substrate Misorientation Effect on Cubic and Hexagonal GaN Grown on GaAs by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source



    Kongress:

    Summer topical meeting, Optoelectronic materials growth and processing ; 1994 ; Lake Tahoe; NV



    Erscheinungsdatum :

    1994-01-01


    Format / Umfang :

    2 pages


    Anmerkungen:

    Contains 4 conferences published jointly. IEEE Cat no 94TH0606-4; Shelving title: LEOS 1994



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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