Substrate Misorientation Effect on Cubic and Hexagonal GaN Grown on GaAs by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
Summer topical meeting, Optoelectronic materials growth and processing ; 1994 ; Lake Tahoe; NV
1994-01-01
2 pages
Contains 4 conferences published jointly. IEEE Cat no 94TH0606-4; Shelving title: LEOS 1994
Aufsatz (Konferenz)
Englisch
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