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Infrarotdetektor
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keywords:("Infrarotdetektor")
Hg~1~-~xCd~xTe(112) nucleation on silicon composite substrates (Invited Paper) [4454-09]
HgCdTe for far-infrared heterodyne detection [5209-09]
High-operability SWIR HgCdTe focal plane arrays [5209-03]
Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy [4454-36]
Noise reduction in BIB-type detectors [4454-27]
Advances in linear and area HgCdTe APD arrays for eyesafe LADAR sensors (Invited Paper) [4454-24]
High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE [4454-22]
MWIR HgCdTe avalanche photodiodes (Invited Paper) [4454-23]
High-sensitivity (25-mum pitch) microbolometer FPAs (Invited Paper) [4454-19]
Dark current transport mechanisms in narrow-gap heterojunctions for IR arrays [4454-18]
GaInAs/InP quantum well infrared photodetectors grown on Si substrates (Invited Paper) [4454-14]
High-operating-temperature (HOT) detector requirements (Invited Paper) [4454-21]
Space applications for HgCdTe at FIR wavelengths between 50 and 150 mum (Invited Paper) [4454-02]
Two-color HgCdTe infrared staring focal plane arrays (Invited Paper) [5209-01]
Automatic recording system of dynamic spectral response and its applications [5209-21]
Monolithically integrated HgCdTe focal plane arrays [5209-02]
Thermal infrared characterization of ground targets and backgrounds
Dislocations in HgCdTe (111)B films [4795-14]
Fourth International Conference on Advanced Infrared Detectors and Systems, 5-7 June 1990
HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching [4795-25]
Intermixing effect on asymmetric quantum well [4795-06]
Influence of photoresist feature geometry on ECR plasma-etched HgCdTe frenches [4795-23]
Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures [4795-37]
Building a robust self-test on multimode seeker (MMS) system [5209-19]
Polycrystalline SiGe technology for uncooled microbolometer arrays [5209-10]
Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy [5209-06]
Materials for infrared detectors II : 8 - 9 July 2002, Seattle, Washington, USA
Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates [4795-02]
Annealing study of Cd~1~-~xZn~xTe crystals by IR transmission and micro-Raman spectrum [4795-30]
Optical and electronic characterization on HgCdTe materials [4795-11]
QWIP structural optimization (Invited Paper) [4795-07]
Elaboration of new uncooled detector materials highly sensitive in the near-IR region [5209-24]
Development and evaluation of a novel large-area single-pixel QWIP for infrared radiometry [5209-22]