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    Characteristics of InGaAs/GaAs/GaInP Quantum Well Lasers Grown by Gas-Source Molecular-Beam Epitaxy

    Zhang, G. / Ovtchinnikov, A. / Naeppi, J. et al. | British Library Conference Proceedings | 1992

    High power Al-free 808 nm laser bars

    Nappi, J. / Ovtchinnikov, A. / Asonen, H. et al. | IEEE | 1996

    100 W cw Al-free 808 nm linear bar arrays

    Daiminger, F. / Heinemann, S. / Nappi, J. et al. | IEEE | 1997

    State-of-the-Art Aluminum-Free 980-nm Laser Diodes

    Pessa, M. / Naeppi, J. / Savolainen, P. et al. | British Library Online Contents | 1996

    Aluminum-free active-area laser bars at 790- to 830-nm wavelengths (Invited Paper) [3628-02]

    Asonen, H. M. / Aarik, J. / Bournes, P. A. et al. | British Library Conference Proceedings | 1999

    Test Production of GaInP/GaAs Cascade Space Solar Cells by a High-Throughput Molecular Beam Epitaxy System

    Lammasniemi, J. / Kazantsev, A. B. / Jaakkola, R. et al. | British Library Online Contents | 1998