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1–18 von 18 Ergebnissen
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    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

    Wonfor, A. / Tan, K.T. / Ribbat, C. et al. | IEEE | 2002
    By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value ...

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    Thompson, M.G. / Marinelli, C. / Chu, Y. et al. | IEEE | 2004
    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum ...

    High--power ultrashort pulses output from a modelocked two-section quantum-dot laser

    Rafailov, E.U. / Cataluna, M.-A. / Sibbett, W. et al. | IEEE | 2004

    Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers

    Rafailov, E.U. / White, S.J. / Lagatsky, A.A. et al. | IEEE | 2003

    Vertical cavity surface emitting lasers based on vertically coupled quantum dots

    Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

    Semiconductor optical amplifiers near 1.3 /spl mu/m based on InGaAs/GaAs quantum dots

    Laemmlin, M. / Bimberg, D. / Uskov, A.V. et al. | IEEE | 2004
    We report fiber-to-fiber gain > 8 dB of a quantum dot amplifier equivalent to a net gain of 0.4 dB/(mm*QD layer). This is to our knowledge ...

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

    Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003
    The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

    Quantum-dot based saturable absorber with p-n junction for mode locking of solid-state lasers

    Lagatsky, A.A. / Rafailov, E.U. / Sibbett, W. et al. | IEEE | 2004
    We demonstrate stable mode locking in a Yb:KYW laser by using a quantum-dot saturable absorber structure with p-n-junction. A reduction in ...

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

    35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 /spl mu/m

    Tan, W.K. / Bryce, A.C. / Marsh, J.H. et al. | IEEE | 2004
    35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 /spl mu/m is reported for the first ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

    Gubenko, A.E. / Gadjiev, L.M. / Il'inskaya, N.D. et al. | IEEE | 2004
    (/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed. ...

    High performance long-wavelength QD diode lasers on GaAs substrates

    Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002
    Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...