In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit at a peak wavelength of 1.3 /spl mu/m with a typical room temperature continuous-wave output power of up to 1.5 mW. This is the first report of InAs/InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor distributed Bragg reflectors, emitting at 1.3 /spl mu/m.
Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers
2003-01-01
130655 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
|British Library Online Contents | 2008
|1.3 mum InGaAs Vertical-Cavity Surface-Emitting Lasers
British Library Conference Proceedings | 2005
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