In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit at a peak wavelength of 1.3 /spl mu/m with a typical room temperature continuous-wave output power of up to 1.5 mW. This is the first report of InAs/InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor distributed Bragg reflectors, emitting at 1.3 /spl mu/m.


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    Titel :

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers


    Beteiligte:
    Lott, J.A. (Autor:in) / Ledentsov, N.N. (Autor:in) / Kovsh, A.R. (Autor:in) / Ustinov, V.M. (Autor:in) / Bimberg, D. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    130655 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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