Synonyme wurden verwendet für: quantenpunkt
Suche ohne Synonyme: quantenpunkt

1–18 von 18 Ergebnissen
|

    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

    Ledentsov, N.N. / Bimberg, D. / Alferov, Z.I. | British Library Online Contents | 2008

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    Stable modelocked operation from a quantum-dot laser in a broad temperature range

    Rafailov, E.U. / Cataluna, M.A. / Sibbett, W. et al. | IEEE | 2005
    We demonstrate stable modelocking operation in a two-section quantum-dot laser at temperatures ranging from 20/spl deg/C to 80/spl deg/C ...

    GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

    Lott, J.A. / Stintz, A. / Kovsh, A.R. et al. | IEEE | 2005
    This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a ...

    High--power ultrashort pulses output from a modelocked two-section quantum-dot laser

    Rafailov, E.U. / Cataluna, M.-A. / Sibbett, W. et al. | IEEE | 2004

    Vertical cavity surface emitting lasers based on vertically coupled quantum dots

    Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

    Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers

    Uskov, A.V. / O'Reilly, E.P. / Manning, R.J. et al. | IEEE | 2004
    It is shown that interferometers containing quantum-dot semiconductor optical amplifiers can be effective for ultrafast cross-phase ...

    An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers

    Uskov, A.V. / O'Reilly, E.P. / McPeake, D. et al. | IEEE | 2004
    The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is ...

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

    Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005
    quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    High performance long-wavelength QD diode lasers on GaAs substrates

    Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002
    Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

    Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

    Gubenko, A.E. / Gadjiev, L.M. / Il'inskaya, N.D. et al. | IEEE | 2004
    (/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed. ...