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1–16 von 16 Ergebnissen
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    Quantum Dot Semiconductor Optical Amplifiers and Switches

    Penty, R.V. / White, I.H. / Liu, S. et al. | IEEE | 2006

    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    Ground and excited-state modelocking in a two-section quantum-dot laser

    Cataluna, M.A. / Rafailov, E.U. / McRobbie, A.D. et al. | IEEE | 2005
    quantum-dot laser. The change of generation between these states in the mode-locking regime is fully controllable. ...

    High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

    Wonfor, A. / Tan, K.T. / Ribbat, C. et al. | IEEE | 2002
    By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value ...

    Stable modelocked operation from a quantum-dot laser in a broad temperature range

    Rafailov, E.U. / Cataluna, M.A. / Sibbett, W. et al. | IEEE | 2005
    We demonstrate stable modelocking operation in a two-section quantum-dot laser at temperatures ranging from 20/spl deg/C to 80/spl deg/C ...

    GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

    Lott, J.A. / Stintz, A. / Kovsh, A.R. et al. | IEEE | 2005
    This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a ...

    Semiconductor optical amplifiers near 1.3 /spl mu/m based on InGaAs/GaAs quantum dots

    Laemmlin, M. / Bimberg, D. / Uskov, A.V. et al. | IEEE | 2004
    We report fiber-to-fiber gain > 8 dB of a quantum dot amplifier equivalent to a net gain of 0.4 dB/(mm*QD layer). This is to our knowledge ...

    The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

    Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003
    The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

    Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005
    quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    High performance long-wavelength QD diode lasers on GaAs substrates

    Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002
    Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

    Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

    Gubenko, A.E. / Gadjiev, L.M. / Il'inskaya, N.D. et al. | IEEE | 2004
    (/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed. ...