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Optoelektronik
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keywords:(Optoelektronik)
1.047m Synchronously Pumped Optical Parametric Oscillator in Bulk Periodically Poled LiNbO~3
1.55 nm-wavelength CW Microchip Lasers
1-W Continuous-wave Diode-pumped Cr:LiSAF Laser
1 W CW 2.12 m Lamp Pumped Room Temperature YAG:Yb-Ho Laser
1 x 4 GaAs optical switch array with asymmetric X junction [2891-536]
2.5-Watt Single-frequency CW Tin, Ho:YLF Ring Laser
2x64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts [4355-07]
2μm fiber laser sources and their applications (Invited Paper) [8164-08]
3.4 mum "Flip-chip" LEDs for Fiber Optic Liquid Sensing
3D image formation by the second-harmonic generated hologram [4513-12]
3D image projection using large diffractive screens
3D light structuring and some applications
3D-TOF sensors in the automobile [5663-45]
8 Micron ZGP OPO Pumped at 2 Microns
14 Gbit/s digital optical transmitter module using GaAs HBTs and DFB laser
20 GHz High Performance Planar Si/InGaAs P-I-n Photodetector
24-GHz frequency modulated/continuous wave automotive radar designed for collision warning [2344-18]
47 fs Pulse Generation from a Prismless Self-Mode-Locked Cr:LiSGaF laser
69 W Average Power Yb:YAG Laser
100 Gb/s Optical Network Technology
100-GHz low-noise MESFET, HFET, and MSM technology for 10-Gb/s OEIC applications [3795-83]
128 x 128-element silicon microlens array fabricated by ion-beam etching for PtSi IRCCD [3551-32]
130 Gsample/s Photonic Analog to Digital Converter
206-Channel Wavelength-Division Multiplexed Transmitter using a Single Femtosecond Laser
360^o vision system: opportunities in transportation [6758-16]
400nm InGaN/GaN and InGaN/AlGaN Multiquantum Well Light-emitting Diodes
560mW, Fifth Harmonic (213nm), 200Hz Flashlamp Pumped Nd:YAG Laser System
808 nm High Power Laser Diodes Based on MOCVD Grown AlGaAs/GaAs Broad Waveguide Heterostructures
1992 Topical Meeting on Photonic Switching : 1 - 3 July 1992, Minsk, Belarus
2005 IEEE LEOS annual meeting conference proceedings (LEOS) : Sydney, Australia, 22-28 October, 2005
A~2MX~4 Crystals as New Materials for Optoelectronics Sensors
A-7ALOFT economic analysis and EMI-EMP test results