4-mum negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180^oC [4355-23]
International conference; 5th, Material science and material properties for infrared optoelectronics ; 2000 ; Kiev, Ukraine
2001-01-01
7 pages
Aufsatz (Konferenz)
Englisch
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