Synonyme wurden verwendet für: quantenpunkt
Suche ohne Synonyme: quantenpunkt

1–18 von 18 Ergebnissen
|

    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

    Wonfor, A. / Tan, K.T. / Ribbat, C. et al. | IEEE | 2002
    By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value ...

    Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    Thompson, M.G. / Marinelli, C. / Chu, Y. et al. | IEEE | 2004
    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum ...

    High--power ultrashort pulses output from a modelocked two-section quantum-dot laser

    Rafailov, E.U. / Cataluna, M.-A. / Sibbett, W. et al. | IEEE | 2004

    Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers

    Rafailov, E.U. / White, S.J. / Lagatsky, A.A. et al. | IEEE | 2003

    Vertical cavity surface emitting lasers based on vertically coupled quantum dots

    Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

    Semiconductor optical amplifiers near 1.3 /spl mu/m based on InGaAs/GaAs quantum dots

    Laemmlin, M. / Bimberg, D. / Uskov, A.V. et al. | IEEE | 2004
    We report fiber-to-fiber gain > 8 dB of a quantum dot amplifier equivalent to a net gain of 0.4 dB/(mm*QD layer). This is to our knowledge ...

    The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

    Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003
    The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    Quantum-dot based saturable absorber with p-n junction for mode locking of solid-state lasers

    Lagatsky, A.A. / Rafailov, E.U. / Sibbett, W. et al. | IEEE | 2004
    We demonstrate stable mode locking in a Yb:KYW laser by using a quantum-dot saturable absorber structure with p-n-junction. A reduction in ...

    35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 /spl mu/m

    Tan, W.K. / Bryce, A.C. / Marsh, J.H. et al. | IEEE | 2004
    35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 /spl mu/m is reported for the first ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    High performance long-wavelength QD diode lasers on GaAs substrates

    Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002
    Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

    Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

    Gubenko, A.E. / Gadjiev, L.M. / Il'inskaya, N.D. et al. | IEEE | 2004
    (/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed. ...