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1–7 von 7 Ergebnissen
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    Photoelectric characteristics of the epitaxial film Cd~xHg~1~-~xTe grown by molecular beam epitaxy [3890-31]

    Voitsekhovskii, A. V. / Denisov, Y. A. / Kokhanenko, A. P. et al. | British Library Conference Proceedings | 1999
    Schlagwörter: semiconductor physics

    Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg~1~-~xZn~xTe [3890-10]

    Lanskaya, O. G. / Lilenko, E. P. / Voitsekhovskii, A. V. et al. | British Library Conference Proceedings | 1999
    Schlagwörter: semiconductor physics

    Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method [4355-24]

    Voitsekhovskii, A. V. / Lanskaya, O. G. / Lilenko, E. P. et al. | British Library Conference Proceedings | 2001
    Schlagwörter: semiconductor physics

    Electron-positron annihilation in the narrow-gap semiconductor Hg~1~-~xCd~xTe [4355-25]

    Kokhanenko, A. P. / Korotaev, A. G. / Voitsekhovskii, A. V. et al. | British Library Conference Proceedings | 2001
    Schlagwörter: semiconductor physics

    Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe [4355-04]

    Voitsekhovskii, A. V. / Nesmelov, S. N. / Koulchitskii, N. A. et al. | British Library Conference Proceedings | 2001
    Schlagwörter: semiconductor physics

    Carrier lifetime in Hg~1~-~xCd~xTe grown by molecular beam epitaxy

    Voitsekhovskii, A. V. / Denisov, Y. A. / Kokhanenko, A. P. et al. | British Library Conference Proceedings | 1999
    Schlagwörter: applied physics

    Threshold characteristics of p-Si-PtSi barriers with highly doped surface nanolayer [5065-15]

    Nesmelov, S. N. / Voitsekhovskii, A. V. / Kokhanenko, A. P. et al. | British Library Conference Proceedings | 2003
    Schlagwörter: semiconductor physics