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    Titel :

    Threshold characteristics of p-Si-PtSi barriers with highly doped surface nanolayer [5065-15]



    Kongress:

    International conference; 6th, Material science and material properties for infrared optoelectronics ; 2002 ; Kiev, Ukraine



    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    8 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 5065

    DataCite | 1942


    Quartz as artificial pyroactive material [5065-12]

    Kosorotov, V. F. / Blonsky, I. V. / Shchedrina, L. V. et al. | British Library Conference Proceedings | 2003


    Electrical properties of HgMnTe Schottky diodes [5065-18]

    Kosyachenko, L. A. / Ostapov, S. E. / Markov, A. V. et al. | British Library Conference Proceedings | 2003


    Nonelastic electron scattering in HgTe [5065-13]

    Malyk, O. P. / International Society for Optical Engineering / National Academy of Sciences of Ukraine | British Library Conference Proceedings | 2003


    The study of HgCdMnZnTe main-band parameters [5065-19]

    Ostapov, S. E. / International Society for Optical Engineering / National Academy of Sciences of Ukraine | British Library Conference Proceedings | 2003