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1–17 von 17 Ergebnissen
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    Comparison of quantum dot lasers with and without strain compensation layers

    Lever, P. / Buda, M. / Tan, H.H. et al. | IEEE | 2003
    In this paper, comparison of self-assembled quantum dot lasers with and without strain compensation layers is performed. It is found that ...

    Compound semiconductor optoelectronics research at the Australian National University

    Tan, H.H. / Buda, M. / Fu, L. et al. | IEEE | 2005
    materials, (iii) quantum dot electronic devices, (iv) integrated optoelectronic devices, (v) photonic crystals, (vi) semiconductor THz emitters and ...

    Effects of strain and barrier height of thin interlayer on InAs quantum dots grown on GaInAsP/InP (100) by metalorganic chemical vapor deposition

    Barik, S. / Tan, H.H. / Barik M, et al. | IEEE | 2005
    experimentally observed blue-shift in the photoluminescence of InAs quantum dots grown on GaInAsP/InP (100). ...

    Growth of InGaAs quantum dots by metal organic chemical vapour deposition

    Lever, P. / Tan, H.H. / Jagadish, C. | IEEE | 2002
    In/sub 0.5/Ga/sub 0.5/As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these ...

      Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition

      Lever, P. / Tan, H. H. / Jagadish, C. et al. | British Library Conference Proceedings | 2002

    InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition

    Jolley, G. / Tan, H.H. / Fu, L. et al. | IEEE | 2005
    The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the ...

    Integration of an InGaAs quantum-dot laser with a passive waveguide using selective-area MOCVD

    Mokkapati, S. / Tan, H.H. / Jagadish, C. | IEEE | 2005
    We present the design and operation of an InGaAs quantum-dot laser integrated with a passive waveguide. Selective-area MOCVD is used to ...

    Interdiffusion in InGaAs quantum dots by ion implantation

    Lever, P. / Tan, H.H. / Reece, P. et al. | IEEE | 2002
    Implantation induced interdiffusion of InGaAs quantum dots has been carried out using hydrogen and arsenic ions. Large energy shifts and ...

      Interdiffusion in InGaAs Quantum Dots by Ion Implantation

      Lever, P. / Tan, H. H. / Reece, P. et al. | British Library Conference Proceedings | 2002

    MOCVD growth of InAs/GaAs quantum dots and laser diodes

    Stewart, K. / Tan, H.H. / Wong-Leong, J. et al. | IEEE | 2004
    This paper discusses the growth of InAs/GaAs quantum dots using MOCVD. Laser diode fabrication using stacked quantum dot structures is also ...

    Quantum dot lasers and optoelectronic device integration

    Sears, K. / Mokkapati, S. / Buda, M. et al. | IEEE | 2005
    This paper highlights quantum dot (QD) lasers and QD optoelectronic device integration. The emission spectrum, room temperature ...

    Quantum dot optoelectronic devices

    Jagadish, C. / Tan, H.H. | IEEE | 2005

    Quantum Dot Optoelectronic Devices (Invited)

    Jagadish, C. / Tan, H. H. / IEEE | British Library Conference Proceedings | 2005

    Rapid thermal annealing study of InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

    Fu, L. / Kuffner, P. / McKerracher, I. et al. | IEEE | 2005
    In this work, the effects of postgrowth rapid thermal annealing (RTA) on tuning the operating wavelength of self-assembled quantum dots ...

    Room-temperature pulsed operation of InGaAsN quantum dot lasers

    Gao, Q. / Buda, M. / Tan, H.H. et al. | IEEE | 2004
    This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 ...

    Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

    Stewart, K. / Buda, M. / Wong-Leung, J. et al. | IEEE | 2002
    In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared ...

      Strain Relaxation in Rapid Thermally Annealed InAs/GaAs Quantum Dot Infrared Photodetectors

      Stewart, K. / Buda, M. / Wong-Leung, J. et al. | British Library Conference Proceedings | 2002

    Suppression of Interdiffusion in In~0~.~5Ga~0~.~5As/GaAs Quantum Dots

    Fu, L. / Lever, P. / Tan, H. H. et al. | British Library Conference Proceedings | 2002

    Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots

    Fu, L. / Lever, P. / Tan, H.H. et al. | IEEE | 2002
    /sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only ...