Unglue bonding of glassceramic parts with ultralow coefficient of thermal expansion [5454-17]
Readout device processing electronics for IR linear and focal plane arrays [3698-95]
Nonlinear optical transmission of Cd~0~.~2Hg~0~.~8Te single crystals at room temperature [3182-25]
Currents in Hg~1~-~xCd~xTe photodiodes [3890-22]
Carrier transport mechanisms in narrow-gap photodiodes (Invited Paper)
High-quality lead telluride films grown on silicon with buffer porous silicon layers [3890-79]
Electronic properties and energy spectrum of SnTe doped with In [3890-58]
Silicon p-i-n photodiode with low values of dark current [3890-19]
Radiation-acoustic treatment of gallium phosphide light diodes [3890-90]
Temperature stability of the IBM-formed Cd~xHg~1~-~xTe p-n structure [3890-83]
Dissolution of indium arsenide in HNO~3-HBr-H~2O and Br~2-HBr solutions [3890-76]
Resonant generation of difference harmonics in heterostructures with closely space levels [3890-63]