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    Titel :

    High-quality lead telluride films grown on silicon with buffer porous silicon layers [3890-79]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    5 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]

    Zogg, H. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Nr. 3890

    DataCite | 1920


    New optical materials for an infrared technique based on cadmium telluride [3890-67]

    Savitsky, A. V. / Burachek, V. R. / Parfenyuk, O. A. et al. | British Library Conference Proceedings | 1999


    Silicon p-i-n photodiode with low values of dark current [3890-19]

    Ascheulov, A. A. / Godovanyuk, V. M. / Dobrovolsky, Y. G. et al. | British Library Conference Proceedings | 1999


    Optical properties of semiconducting iron disilicide thin films [3890-29]

    Ozvold, M. / Gasparik, V. / Mrafko, P. et al. | British Library Conference Proceedings | 1999