Evaluations of As-fabricated GaN-based light-emitting diodes [2886-508]
Deep levels in HgCdTe photodectectors [2886-569]
Semiconductor lasers in China (Invited Paper) [2886-518]
LPE growth of high-power InGaAsP/GaAs SCH SQW lasers [2886-547]
Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD [2886-505]
AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [2886-553]
Laser diode in a coherent resolved interferometer [2886-551]
Optically pumped intersubband electron Raman lasers [2886-501]
Far-field control of vertical cavity surface emitting lasers [2886-521]
High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]
1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]