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    Threshold characteristics of p-Si-PtSi barriers with highly doped surface nanolayer [5065-15]

    Nesmelov, S. N. / Voitsekhovskii, A. V. / Kokhanenko, A. P. et al. | British Library Conference Proceedings | 2003

    Photoelectric characteristics of the epitaxial film Cd~xHg~1~-~xTe grown by molecular beam epitaxy [3890-31]

    Voitsekhovskii, A. V. / Denisov, Y. A. / Kokhanenko, A. P. et al. | British Library Conference Proceedings | 1999

    High-power pulse electron beam modification and ion implantation of Hg~1~-~xCd~xTe epitaxial structures [3182-59]

    Voitsekhovskii, A. V. / Kokhanenko, A. P. / Denisov, Y. A. et al. | British Library Conference Proceedings | 1997

    Carrier lifetime in Hg~1~-~xCd~xTe grown by molecular beam epitaxy

    Voitsekhovskii, A. V. / Denisov, Y. A. / Kokhanenko, A. P. et al. | British Library Conference Proceedings | 1999

    Electron-positron annihilation in the narrow-gap semiconductor Hg~1~-~xCd~xTe [4355-25]

    Kokhanenko, A. P. / Korotaev, A. G. / Voitsekhovskii, A. V. et al. | British Library Conference Proceedings | 2001