This paper deals with the ageing parameters of high power IGBT modules in traction applications. Using the results of a number of power cycling tests on 400 A modules, it shows that, in addition to the junction temperature excursion, other parameters such as the maximal chip temperature and the current density are involved in thermal fatigue failures. Also, contact temperature measurements achieved on the IGBT chip surface in cycling conditions to localise the maximal thermomechanical stress are presented and are correlated with module failure analyses. The role of current density in the ageing process is finally shown by determining its influence on the chip surface temperature gradient.
Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions
ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 8 ; 1755-1758
Microelectronics and Reliability ; 37 , 10-11
1997
4 Seiten, 4 Quellen
Aufsatz (Konferenz)
Englisch
Reliability of IGBT Power Modules for Traction Applications
British Library Conference Proceedings | 1999
|Fast power cycling test of IGBT modules in traction application
Tema Archiv | 1997
|Reliable 1200A, 2500V IGBT modules for traction applications
British Library Conference Proceedings | 1995
|Model for Power Cycling lifetime of IGBT Modules - various factors influencing lifetime
British Library Conference Proceedings | 2008
|