As military program managers struggle to implement the post-silicon technology of gallium arsenide integrated circuits in the coming generation of tactical weapon systems, an even more powerful challenger is emerging for military and space applications of the future: indium phosphide. This technology not only is of interest to scientists in the United States, but it also has strong international interest on the part of the North Atlantic Treaty Organization allies. While both offer considerable improvements over silicon in such key characteristics as electron mobility and resistance to radiation, they are extremely difficult to work with. Made of deadly poisons, these compounds are not only susceptible to defects during the crystal-growing process, but also tend to result in very brittle devices.


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    Titel :

    Scientists seek materials beyond gallium arsenide (InP for weapons systems)


    Weitere Titelangaben:

    Anwendung von InP für Waffensysteme


    Beteiligte:
    Rhea, J. (Autor:in)

    Erschienen in:

    Signal ; 45 , 2 ; 55-57


    Erscheinungsdatum :

    1990


    Format / Umfang :

    3 Seiten



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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