A normally-on MOSFET structure called j-MOS for automotive electronic systems applications is discussed. These devices are built on silicon-on-insulator (SOI) and in bulk silicon and can be integrated as a smart power circuit element. The lowest on-resistance j-MOS device is built in an ideal trench configuration in bulk silicon and can be operated in either a three-terminal or a four-terminal mode. When operated in accumulation, a specific on-resistance of 0.8 m Omega cm2 is reported. This low on-resistance is attributed to the combination of bulk conduction and surface accumulation, as well as to the details of the electron current flow in the channel. A factor of two superiority is reported in on-resistance over a trench DMOS structure for a given drain blocking voltage and feature size. In the four-terminal mode, a high transconductance, 290 S/cm2, is achieved by controlling the voltage on the small junction in the gate. In the three-terminal mode, mixed pentode-triode drain characteristics are exhibited. Response times are comparable to those of a junction FET. This simple self-aligned structure could be useful in power switching and control applications.


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    Titel :

    Trench j-MOS power field-effect transistors


    Weitere Titelangaben:

    Leistungs-Feldeffekttransistoren mit Graben-j-MOS-Struktur


    Beteiligte:
    Jain, K.C. (Autor:in) / MacIver, B.A. (Autor:in) / Valeri, S.J. (Autor:in) / Erskine, J.C. (Autor:in) / Bulucea, C. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1989


    Format / Umfang :

    6 Seiten, 7 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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