Extremely thin silicon solar cells are of interest for space applications. Performance models show that a surface-passivated, light-trapping silicon solar cell can have optimum thicknesses as thin as 5 mu m, and maintain high efficiency down to thicknesses of under 2 mu m. Such cells have specific power and extremely good radiation damage tolerance, as well as high efficiency. New methods of fabricating and handling such thin light-trapping cells using epitaxial growth on a removable substrate are discussed. The substrate provides mechanical support to reduce breakage. When the substrate is removed, a transparent glass superstrate provides the mechanical support. By using a process technology in which a sacrificial lattice-matched CaF2 is used, it is possible to re-use the single-crystal substrate.


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    Titel :

    A process sequence for manufacture of ultra-thin, light-trapping silicon solar cells


    Weitere Titelangaben:

    Eine Prozeßfolge für die Fertigung ultradünner, lichteinfangender Siliciium-Sonnenzellen


    Beteiligte:
    Landis, G.A. (Autor:in)

    Erschienen in:

    Solar Cells ; 29 , 2-3 ; 257-266


    Erscheinungsdatum :

    1990


    Format / Umfang :

    10 Seiten, 21 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch