The development of technology and processing methods for producing high-efficiency GaAs solar cells for use on spacecraft is described. High-throughput MOCVD (metalorganic chemical vapor deposition) and subsequent cell processing led to delivery of production quantities of GaAs cells formed on GaAs substrates. To meet advanced array requirements calling for high-efficiency cells which are larger and thinner, GaAs cells were grown on Ge substrates. How GaAs/Ge cells are now meeting production requirements is described.


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    Titel :

    Gallium arsenide-on-germanium solar cells


    Weitere Titelangaben:

    GaAs/Ge-Sonnenzellen


    Beteiligte:
    Iles, P.A. (Autor:in) / Ho, F. (Autor:in) / Yeh, M. (Autor:in) / Datum, G. (Autor:in) / Billets, S. (Autor:in)


    Erscheinungsdatum :

    1989


    Format / Umfang :

    7 Seiten, 7 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch