The development of advanced GaAs concentrator solar cells for space power systems, and, in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported. These cells are 4 mu m-thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8% has been obtained for a CLEFT concentrator operating at 18.5 suns.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Concepts for thin-film GaAs concentrator cells


    Weitere Titelangaben:

    Konzepte für Dünnschicht-GaAs-Sonnenzellen mit Lichtkonzentrierung


    Beteiligte:
    Spitzer, M.B. (Autor:in) / Gale, R.P. (Autor:in) / McClelland, R. (Autor:in) / King, B. (Autor:in) / Dingle, J. (Autor:in) / Morrison, R. (Autor:in)


    Erscheinungsdatum :

    1989


    Format / Umfang :

    6 Seiten, 10 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Characteristics of GaAs-based concentrator cells

    Araki, Kenji | Online Contents | 2001


    Thermal annealing of GaAs concentrator solar cells

    Curtis, H.B. / Brinker, D.J. | Tema Archiv | 1989




    Ultra-Thin-Film GaAs Solar Cells

    Wang, K. L. / Shin, B. K. / Yeh, Y. C. M. et al. | NTRS | 1982