Several monolithic HEMT (high electron mobility transistors) low-noise amplifiers (LNAs), designed for 7-11-GHz airborne radar, 2-18-GHz electronic warfare, and 20-GHz military satellite communications applications have demonstrated outstanding performance. Two-stage MMICs (monolithic microwave integrated circuits) achieve as low as 1.2 dB noise figure at 10 GHz with 15 dB gain, and typically less than 1.8 dB noise figure from 7-11 GHz. A distributed amplifier demonstrates 3.0-5.2 dB noise figure with around 11 dB gain from 2-18 GHz. Finally, a three-stage MMIC achieves less than 2.0 dB noise figure from 18-23 GHz with 29 dB associated gain, representing the highest level of performance yet reported for a low-noise MMIC.


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    Titel :

    Monolithic HEMT LNAS for radar, EW, and COMM


    Weitere Titelangaben:

    Monolithischer HEMT LNAS fuer Radar, elektronische Kampffuehrung und Satellitenkommunikation


    Beteiligte:
    Upton, M.A.G. (Autor:in) / Snow, K.H. (Autor:in) / Goldstick, D.I. (Autor:in) / Kong, W.M. (Autor:in) / Kao, M.Y. (Autor:in) / Kopp, W.F. (Autor:in) / Ho, P. (Autor:in) / Tessmer, G.J. (Autor:in) / Lee, B.R. (Autor:in) / Wypych, K.A. (Autor:in)


    Erscheinungsdatum :

    1989


    Format / Umfang :

    5 Seiten, 8 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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    Upton, M.A.G. / Snow, K.H. / Goldstick, D.I. et al. | Tema Archiv | 1989


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