IGBTs are a new class of high voltage insulated gate bipolar power semiconductors that combine the advantages of MOS gate drive simplicity with the current handling capability of bipolar devices. A brief explanation of the physics and the structure of the device is given and the characteristics which make IGBTs the best choice for automotive ignition power switches are pointed out.


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    Titel :

    Power switches for automotive ignition


    Weitere Titelangaben:

    Leistungsschalter fuer Kfz-Zuendungen


    Beteiligte:
    Melito, M. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1989


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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