This paper presents results of the complex development of specialized power gate turn-off thyristor (GTO) for pulse currents of 1000 to 1250 and 2000 to 2500 A, repetitive voltages to 2400 and 4000 V, respectively, and associated devices, such as: fast recovery diodes for the same voltages and medium currents from 50 to 500 A and special bipolar transistors for pulse currents of 400 to 600 and 50 V voltage.


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    Titel :

    Complete power semiconductor devices for electric vehicle


    Weitere Titelangaben:

    Komplette Leistungshalbleiterbauelemente für elektrische Fahrzeuge


    Beteiligte:
    Dermenjzi, P. (Autor:in) / Doumanevitch, A. (Autor:in) / Potaptchouk, V. (Autor:in)


    Erscheinungsdatum :

    1995


    Format / Umfang :

    6 Seiten, 6 Bilder, 5 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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