A new 60 V BiCDMOS device technology has been developed for specialized automotive applications. This technology merges a 7 V, 2 micrometer CMOS process and a 7 V bipolar transistor process with a 60 V DMOS process. Bipolar transistors for 18 V and 35 V are also available without any additional process steps. In addition, it includes a multithickness metal process which permits the use of a thin patterned metal layer over the signal parts for high packing density and a thick metal layer over the power parts for low voltage drop. With the availability of the multithickness metal process, chip size can be reduced.


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    Titel :

    A 60 V BiCDMOS device technology for automotive applications


    Weitere Titelangaben:

    Eine 60-V-BiCDMOS-Bauelementetechnologie für Kraftfahrzeuganwendungen


    Beteiligte:
    Hamada, K. (Autor:in) / Kawai, F. (Autor:in) / Kushida, T. (Autor:in) / Kawahashi, A. (Autor:in)


    Erscheinungsdatum :

    1995


    Format / Umfang :

    5 Seiten, 8 Bilder, 1 Tabelle, 6 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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