A piezoresistive silicon accelerometer with complete on-chip signal conditioning for automotive applications was developed. The sensor is a three-layer device fabricated and bonded completely on a wafer scale. The functional units of the electronic circuit include amplification, temperature drift compensation, and an auto-zero offset compensation capability for the complete drive. The results indicate that the sensor fabrication is compatible with a CMOS process and that it has the potential for a low-cost high yield process.
A piezoresistive silicon accelerometer with monolithically integrated CMOS-circuitry
Ein piezoresistives Silicium-Beschleunigungsmeter mit monolithisch integrierter CMOS-Schaltung
1995
4 Seiten, 7 Bilder, 1 Tabelle, 8 Quellen
Aufsatz (Konferenz)
Englisch
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