A piezoresistive silicon accelerometer with complete on-chip signal conditioning for automotive applications was developed. The sensor is a three-layer device fabricated and bonded completely on a wafer scale. The functional units of the electronic circuit include amplification, temperature drift compensation, and an auto-zero offset compensation capability for the complete drive. The results indicate that the sensor fabrication is compatible with a CMOS process and that it has the potential for a low-cost high yield process.


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    Titel :

    A piezoresistive silicon accelerometer with monolithically integrated CMOS-circuitry


    Weitere Titelangaben:

    Ein piezoresistives Silicium-Beschleunigungsmeter mit monolithisch integrierter CMOS-Schaltung


    Beteiligte:
    Seidel, H. (Autor:in) / Fritsch, U. (Autor:in) / Gottinger, R. (Autor:in) / Schalk, J. (Autor:in) / Walter, J. (Autor:in) / Ambaum, K. (Autor:in)


    Erscheinungsdatum :

    1995


    Format / Umfang :

    4 Seiten, 7 Bilder, 1 Tabelle, 8 Quellen



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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