Many smart power applications, especially in the automotive area, require devices with a maximum in ruggedness and reliability. Continuous scaling down of modern devices and increasing demand from harsh operation environment makes the optimization of the device challenging. High Power Reliability Assessment (HPRA), based on repetitive Clamped Inductive Switching (CIS) measurement, is a frequently chosen method for characterizing the ruggedness of a device at simultaneous high current and high voltage stress. This paper describes a method to monitor real-time temperature and Rdson changing of a discrete trench power MOSFET during HPRA test, presenting a complete picture of the dynamics involved in a HPRA operation condition. The investigation explores the device failure mechanisms, and correlates failures with key features of the device technology through extensive measurements, 2-D electro-thermal transient simulation and failure analysis.


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    Titel :

    High Power Trench MOSFET (LFET1T) High Power Reliability Assessment (HPRA) characterization and temperature monitoring


    Beteiligte:
    Chen, Jingjing (Autor:in) / Qin, Ganming (Autor:in) / Ku, Pon (Autor:in) / Zupac, Dragan (Autor:in) / Wang, Peilin (Autor:in) / Li, Wenyi (Autor:in) / Fresart, Edouard de (Autor:in)


    Erscheinungsdatum :

    2011


    Format / Umfang :

    7 Seiten, 12 Bilder, 9 Quellen


    Anmerkungen:

    (nicht paginiert)


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Datenträger


    Sprache :

    Englisch




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