4H-SiC PIN diodes have been fabricated on a Norstel P(+)/N/N(+) substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 4.5 kV has been measured at 1 microA for devices with an active area of 2.6 mm2. The differential on-resistance at 15 A (600 A cm-2) was of only 1.7 mOhm x cm2 (25 Cel) and 1.9 mOhm cm2 at 300 Cel. The reduced recovery charge was of 300 nC for a switched current of 15 A (500 V) at 300 Cel. 20% of the diodes showed no degradation at all after 60 h of dc stress (25-225 Cel). Other 30% of the diodes exhibit a reduced voltage shift below 1 V. For those diodes, the leakage current remains unaffected after the dc stress. Electroluminescence investigations reveal a very low density of stacking faults after the dc stress. The manufacturing yield evidences the efficiency of the substrate surface preparation and our technological process.


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    Titel :

    Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift


    Beteiligte:
    Brosselard, P. (Autor:in) / Perez-Tomas, A. (Autor:in) / Hassan, J. (Autor:in) / Camara, N. (Autor:in) / Jorda, X. (Autor:in) / Vellvehi, M. (Autor:in) / Godignon, P. (Autor:in) / Millan, J. (Autor:in) / Bergman, J.P. (Autor:in)

    Erschienen in:

    Semiconductor Science and Technology ; 24 , 9 ; 095004/1-095004/7


    Erscheinungsdatum :

    2009


    Format / Umfang :

    7 Seiten, 11 Bilder, 1 Tabelle, 16 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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