4H-SiC PIN diodes have been fabricated on a Norstel P(+)/N/N(+) substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 4.5 kV has been measured at 1 microA for devices with an active area of 2.6 mm2. The differential on-resistance at 15 A (600 A cm-2) was of only 1.7 mOhm x cm2 (25 Cel) and 1.9 mOhm cm2 at 300 Cel. The reduced recovery charge was of 300 nC for a switched current of 15 A (500 V) at 300 Cel. 20% of the diodes showed no degradation at all after 60 h of dc stress (25-225 Cel). Other 30% of the diodes exhibit a reduced voltage shift below 1 V. For those diodes, the leakage current remains unaffected after the dc stress. Electroluminescence investigations reveal a very low density of stacking faults after the dc stress. The manufacturing yield evidences the efficiency of the substrate surface preparation and our technological process.
Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
Semiconductor Science and Technology ; 24 , 9 ; 095004/1-095004/7
2009
7 Seiten, 11 Bilder, 1 Tabelle, 16 Quellen
Aufsatz (Zeitschrift)
Englisch
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