This paper proposes a new structure for the power MOSFET called FITMOS(TM), which is capable of realizing an ultra-low on-resistance that exceeds the unipolar limit in the automotive breakdown voltage range (50 to 100 V). In the past, FITMOS was developed for use as a 60 V breakdown voltage element. However, the demand for high-output devices for vehicle system applications has been growing in recent years, and a high breakdown voltage element is needed to meet this demand. The authors therefore utilized an efficient design of experiment, the D-optimal design, in an attempt to simultaneously optimize the complexly linked multiple characteristics and factors of FITMOS. As a result, the authors verified conditions for obtaining characteristics for excellent breakdown voltage (BVds=74.0 V), on-resistance (Ron x A=36.4 m Omega mm2 Vg=15 V, excluding substrate resistance), and threshold voltage (Vth=3.0 V).


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    Titel :

    Floating island and thick bottom oxide trench gate MOSFET (FITMOS) approximately ultra-low on-resistance power MOSFET for automotive applications


    Beteiligte:
    Miyagi, K. (Autor:in) / Takaya, H. (Autor:in) / Saito, H. (Autor:in) / Hamada, K. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2007


    Format / Umfang :

    6 Seiten, 8 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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