System leadership in power converters for all automotive and industrial applications requires power semiconductor devices showing outstanding electrical and thermal performance, having excellent capabilities towards ruggedness and proved zero defect reliability data. In this paper an overview of the key power semiconductor devices such as IGBT's, super junction transistor and SiC components are shown and their major development trends discussed. Future requirements towards technology advancements and application aspects are demonstrated. A key success factor for future device developments will be a tight cross functional cooperation between devices physicists, packaging experts and system engineers.


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    Titel :

    Power semiconductor devices - development trends and system interactions


    Beteiligte:
    Lorenz, L. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2007


    Format / Umfang :

    7 Seiten, 16 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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