A MMIC chip set consisting of a power amplifier, a driver amplifier, low noise amplifier, and a frequency doubler has been developed for automotive radar systems at 77GHz. The chip set was fabricated using 0.15 mu m gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76-77GHz with 15.5 dBm output power. The chip size is 2mm x 2mm. The driver amplifier exhibited a gain of 23dB over a 76-77 GHz band with an output power of 13dBm. The chip size is 2.1mm x 2mm. The low noise amplifier achieved a gain of 20 dB in a band between 76-77GHz with an output power of 10 dBm. The chip size is 2.2mm x 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm x 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in W-band.
A 77GHz automotive radar MMIC chip set fabricated by a 0.15 mu m MHEMT technology
2005
4 Seiten, 8 Quellen
Aufsatz (Konferenz)
Englisch
Aluminiumverbindung , Kraftfahrzeugelektronik , Treiberstufe , integrierte Mikrowellenschaltung , Frequenzvervielfacher , Galliumarsenid , HEMT (High Electron Mobility Transistor) , integrierte Schaltung , Drei-Fünf-Verbindung , Indiumverbindung , rauscharmer Verstärker , Millimeterwelle , Leistungsverstärker , Frequenzvervielfachung , Kraftwagen , 200-Nanometer-Bereich
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