Linearity has become a driving requirement for wireless application, especially with the push toward more efficient bandwidth usage and more complex modulation formats. Discrete devices, such as the MMA709 heterojunction-bipolar transistor (HBT) provide the clean performance sought by amplifier designers, while also offering the flexibility of a discrete transistor. The HBT can achieve output levels to +33 dBm (2 W) over moderate bandwidths within the 100-2400 MHz range. The indium-gallium-phosphide (InGaP) HBT based discrete devices are used for commercial and military amplifier applications.
HBT devices deliver gain/linearity to 2.4 GHz
Microwaves & RF ; 43 , 10 ; 96-98
2004
3 Seiten
Aufsatz (Zeitschrift)
Englisch
Broad Beam-High Linearity and High Gain-Narrow Beam Array Antenna System
British Library Conference Proceedings | 2006
|Springer Verlag | 2012
|British Library Online Contents | 1999
Tema Archiv | 1985
Online Contents | 1994