Linearity has become a driving requirement for wireless application, especially with the push toward more efficient bandwidth usage and more complex modulation formats. Discrete devices, such as the MMA709 heterojunction-bipolar transistor (HBT) provide the clean performance sought by amplifier designers, while also offering the flexibility of a discrete transistor. The HBT can achieve output levels to +33 dBm (2 W) over moderate bandwidths within the 100-2400 MHz range. The indium-gallium-phosphide (InGaP) HBT based discrete devices are used for commercial and military amplifier applications.


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    Titel :

    HBT devices deliver gain/linearity to 2.4 GHz


    Beteiligte:
    Sahjani, P. (Autor:in)

    Erschienen in:

    Microwaves & RF ; 43 , 10 ; 96-98


    Erscheinungsdatum :

    2004


    Format / Umfang :

    3 Seiten



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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