Under regulatory pressure, automobile manufacturers are now designing tomorrow's vehicle systems to meet new efficiency and emissions expectations. Simultaneously, market-driven feature content is pushing up electrical system loading beyond current low cost solutions. Manufacturers must face the fact that most of the cost of these changes cannot be passed to the end consumer without adversely affecting sales. Minimizing power losses is key to maintaining the required cost structure, and consequently several system architectures have been proposed. Furthermore, high power applications typically require highly efficient silicon with low RDSon per unit area and low thermal resistance. In cases where high frequency operation is required (100kHz range), low gate charge per unit area can be an additional requirement. This paper introduces a trench silicon technology with all the above attributes and compares it for efficiency, cost, and ruggedness in a common 42V ISA system architecture. Low RDSon per unit area and RDSon.Q product make the technology ideal for high power automotive and fast switching applications. Improvements of 30% in RDSon.Area product and 40% in RDSon.Q product were observed over the benchmark planar technology over a wide range of voltages. Avalanche energy was also comparable to the existing planar technology.


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    Titel :

    Advanced trench technology for 42V automotive applications


    Weitere Titelangaben:

    Fortschrittliche Trench-Technologie für 42V-Automobilanwendungen


    Beteiligte:
    Murray, A. (Autor:in) / Cao, J. (Autor:in) / Chen, J. (Autor:in) / Frank, R. (Autor:in)


    Erscheinungsdatum :

    2003


    Format / Umfang :

    9 Seiten, 7 Bilder, 3 Tabellen, 1 Quelle



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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