TOSHIBA has developed 3 types of high current MOSFET modules for automotive 42 V power supplies. The ratings are 80 V - 600 A, 80 V - 200 A and 75 V - 100 A. Using SiN DCB and optimized solder process, these modules have reasonable thermal and mechanical reliabilities for automotive applications. The applied MOSFET die is using TOSHIBA 2nd generation UMOSFET trench gate structure in order to achieve small ON resistance. This paper aims to present the design features of these high power MOSFET modules for automotive applications.


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    Titel :

    Power MOSFET modules for 42V power supplies


    Beteiligte:
    Tchouangue, G. (Autor:in) / Tsunoda, T. (Autor:in) / Takemoto, H. (Autor:in) / Kubo, T. (Autor:in) / Nishitani, K. (Autor:in)


    Erscheinungsdatum :

    2002


    Format / Umfang :

    4 Seiten, 2 Bilder, 1 Tabelle, 4 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Datenträger


    Sprache :

    Englisch




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