Theoretical calculations have shown that highest-efficiency III-V multi junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high-efficiency metamorphic single-junction 1.1 and 1.2 eV InGaAs solar cells, interest has grown in the development of multi junction cells of this type, using graded buffer layer technology. Essential Research Incorporated (ERI) is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 27%, and 100-sun efficiency of 31.1%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple junction concentrator tandem cell (projected practical AM0 efficiency 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. The authors are in the process of optimizing the dual junction cell performance. For the triple-junction cell, they have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.


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    Titel :

    Progress in the development of metamorphic multi-junction III-V space solar cells


    Beteiligte:
    Sinharoy, S. (Autor:in) / Patton, M.O. (Autor:in) / Valko, T.M. (Autor:in) / Weizer, V.G. (Autor:in)


    Erscheinungsdatum :

    2002


    Format / Umfang :

    6 Seiten, 6 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch






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