The use of optimized multilayer top contact metallization rather than single-thickness contacts can improve the efficiency of optimized n-p GaAs solar cells by 3.3% for a 4 cm*4 cm geometry and by 1.3% for a 2 cm*2 cm geometry. Multilayer top contacts are also more tolerant of variations in semiconductor layer thicknesses and doping levels. It is also demonstrated that the optimized multilayer contacts on the n-p device are more efficient than those on similarly optimized p-n devices. A description of the power losses due to the top contacts is developed from first principles. An optimization process follows which minimizes the losses for multilayer top contacts. The optimized multilayer contacts are then analyzed for various semiconductor layer thicknesses and doping level changes for both the 4 cm*4 cm and 2 cm*2 cm solar cells as well as the n-p and p-n structures.
Improved energy conversion efficiency of GaAs solar cells for space based on multilayer top contacts
Verbesserter Energieumwandlungswirkungsgrad von GaAs-Sonnenzellen mit Mehrschichtoberseitenkontakt fuer Raumfahrtanwendungen
Solar Cells ; 20 , 4 ; 261-277
1987
17 Seiten, 10 Quellen
Aufsatz (Zeitschrift)
Englisch
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