A lattice-matched four-junction solar cell on a GaAs substrate, for space applications, is demonstrated. The solar cell incorporates MBE grown GaInP, GaAs, GaInNAsSb and GaInNAsSb junctions with band-gaps of 1.9 eV, 1.4 eV, 1.2 eV and 0.9 eV, respectively. For AMO illumination, the cell exhibited a maximum efficiency of 27%. For this performance, a high collection efficiency for the bottom cell is required. The high efficiency and current generation for the four-junction solar cell is primarily enabled by achieving a very low background doping level $(\sim 5\times 10^{14}\mathbf{cm}^{-3})$ and high charge carrier lifetimes (2–4 ns) for the GaInNAsSb bottom junction. Achieving an efficiency of 33% is deemed possible by further reduction of reflection, shadowing and transmission losses.


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    Titel :

    High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs


    Beteiligte:
    Aho, Arto (Autor:in) / Hietalahti, Arttu (Autor:in) / Guina, Mircea (Autor:in) / Raappana, Marianna (Autor:in) / Isoaho, Riku (Autor:in) / Aho, Timo (Autor:in) / Polojarvi, Ville (Autor:in) / Tukiainen, Antti (Autor:in) / Anttola, Elina (Autor:in) / Makela, Severi (Autor:in)


    Erscheinungsdatum :

    01.09.2019


    Format / Umfang :

    310666 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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