Linear system theory techniques were used to predict threshold-voltage shifts for 4007 inverters at dose rates of 270, 49.7, and 0.19 rad(Si)/s, from a transient annealing curve determined following a 5-rad(Si)/s 60.Co irradiation. These predictions were compared with threshold-voltage shifts obtained following 60.Co irradiations actually performed at these dose rates, and the agreement is excellent. We observed a wide range of annealing rates for commercial and military 4007 inverters - some Al-gate inverters exhibited very little annealing following iradiation, while an Si-gate inverter completely annealed back to its preirradiation threshold voltage.


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    Titel :

    Predicting CMOS inverter response in nuclear and space environments


    Weitere Titelangaben:

    Vorhersage des Inverteransprechvermoegens von CMOS-Schaltkreisen nach Bestrahlung in der Raumfahrt und mit Kernstrahlung


    Beteiligte:
    Winokur, P.S. (Autor:in) / Kerris, K.G. (Autor:in) / Harper, L. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1983


    Format / Umfang :

    7 Seiten, 10 Bilder, 12 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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